Unravelling the physisorption characteristics of H2S molecule on biaxially strained single-layer MoS2

Engineering piezoresistivity using biaxially strained silicon

Single Layer MoS2 Band Structure and Transport

Integrated circuits and logic operations based on single-layer MoS2.

Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS(2) represent the ultimate limit of miniaturization in the vert...

Phonons in single-layer and few-layer MoS2 and WS2

We report ab initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS2 and WS2. We explore in detail the behavior of the Raman-active modes A1g and E1 2g as a function of the number of layers. In agreement with recent Raman spectroscopy measurements [C. Lee et al., ACS Nano 4, 2695 (2010)], we find that the A1g mode increases in frequency with an i...

Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires

We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element method has been used to simulate the residual elastic strain in the Ge nanowire. The total energy increment including strain energy, surface energy, and edge energy before and after Ge deposition is calculated in different situations. The result indicates that the Ge nanowire on GaSb is apt to gr...